Transistors - FET's, MOSFET's - Enkellopen

2N7639-GA

Deelvoorraad: 318

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 650V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 15A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A,

2N7638-GA

Deelvoorraad: 339

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 650V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 8A (Tc) (158°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A,

2N7637-GA

Deelvoorraad: 369

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 650V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 7A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A,

2N7636-GA

Deelvoorraad: 431

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 650V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7635-GA

Deelvoorraad: 376

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 650V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7640-GA

Deelvoorraad: 339

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 650V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 16A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A,

GA10SICP12-263

Deelvoorraad: 1777

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 25A (Tc), Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A,

GA50JT06-258

Deelvoorraad: 161

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 600V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT03-46

Deelvoorraad: 1073

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 300V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 9A (Tc), Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A,

GA50JT12-247

Deelvoorraad: 733

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT01-46

Deelvoorraad: 1236

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 100V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 9A (Tc), Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A,

GA04JT17-247

Deelvoorraad: 2389

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1700V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 4A (Tc) (95°C), Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A,

GA08JT17-247

Deelvoorraad: 1402

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1700V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 8A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 250 mOhm @ 8A,

GA20JT12-263

Deelvoorraad: 1840

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 45A (Tc), Rds On (Max) @ Id, Vgs: 60 mOhm @ 20A,

GA10JT12-263

Deelvoorraad: 3360

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 25A (Tc), Rds On (Max) @ Id, Vgs: 120 mOhm @ 10A,

GA05JT12-263

Deelvoorraad: 5916

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 15A (Tc),

GA50JT12-263

Deelvoorraad: 816

GA100JT17-227

Deelvoorraad: 253

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1700V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 160A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A,

GA100JT12-227

Deelvoorraad: 460

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 160A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A,

GA20JT12-247

Deelvoorraad: 2717

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 20A (Tc), Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A,

GA16JT17-247

Deelvoorraad: 925

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1700V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 16A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 110 mOhm @ 16A,

GA10JT12-247

Deelvoorraad: 3338

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 10A (Tc), Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A,

GA03JT12-247

Deelvoorraad: 7277

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 3A (Tc) (95°C), Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A,

GA20SICP12-247

Deelvoorraad: 1734

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 45A (Tc), Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A,

GA50JT17-247

Deelvoorraad: 438

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1700V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT12-247

Deelvoorraad: 10854

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 5A (Tc), Rds On (Max) @ Id, Vgs: 280 mOhm @ 5A,

GA06JT12-247

Deelvoorraad: 6819

Tegnologie: SiC (Silicon Carbide Junction Transistor), Dreineer na bronspanning (Vdss): 1200V, Stroom - Deurlopende dreinering (Id) @ 25 ° C: 6A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A,